Organic device and method of manufacturing the same

ABSTRACT

A device comprising a first layer, a sealing layer and a resin layer stacked in that order and an organic layer arranged between the first layer and the sealing layer in a pixel region is provided. The first, sealing and resin layers have openings for exposing an electrode in a peripheral region. The sealing layer includes second and third layers each having a water permeability lower than the first layer, and a fourth layer arranged between the second layer and the third layer and having a defect density lower than the second layer. A step of the second layer arranged above the end of the opening of the first layer is covered with the fourth layer and a step of the third layer arranged above the end of the opening of the first layer is covered with the resin layer.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.16/366,435, filed Mar. 27, 2019, which claims the benefit of JapanesePatent Application No. 2018-085725, filed Apr. 26, 2018, and JapanesePatent Application No. 2018-218489, filed Nov. 21, 2018. All priorapplications are hereby incorporated by reference herein in theirentirety.

BACKGROUND OF THE INVENTION Field of the Invention

The present invention relates to an organic device and a method ofmanufacturing the same.

Description of the Related Art

An organic device including an organic function layer containing anorganic compound is known. Examples are a light-emitting device using anorganic electroluminescence film, and an imaging device using an organicphotoelectric conversion film. The organic compound easily deterioratesthe characteristics due to water. Japanese Patent Laid-Open No.2010-198969 has disclosed a technique that seals an organic functionlayer by using a sealing layer formed by stacking a silicon nitride filmand an aluminum oxide film.

The present inventors have found that if an insulating layer using amaterial having water permeability higher than that of a sealing layeris arranged below the organic function layer in the whole area of adevice, water from a pad electrode in an opening formed in theinsulating layer and the sealing layer sometimes penetrates the organicfunction layer through the insulating layer. If water penetrates theorganic function layer, the characteristics of an organic compoundcontained in the organic function layer deteriorate, and this candecrease the reliability of the organic device.

SUMMARY OF THE INVENTION

Some embodiments of the present invention provide a techniqueadvantageous in improving the reliability of an organic device.

According to some embodiment, an organic device including, on a surfaceof a substrate, a pixel region in which a plurality of pixels includingan organic function layer are arranged, and a peripheral regionincluding a pad electrode, the organic device comprising a first layer,a sealing layer, and a resin layer stacked in that order from a side ofthe surface, wherein the organic function layer is arranged between thefirst layer and the sealing layer in the pixel region, and the firstlayer, the sealing layer, and the resin layer have openings for exposingthe pad electrode in the peripheral region, the sealing layer includes,from the side of the surface, a second layer and a third layer eachhaving a water permeability lower than that of the first layer, and afourth layer arranged between the second layer and the third layer andhaving a defect density lower than that of the second layer, an end ofthe opening of the first layer is covered with the second layer, thefourth layer, and the third layer, a step of the second layer, which isarranged above the end of the opening of the first layer, is coveredwith the fourth layer, and a step of the third layer, which is arrangedabove the end of the opening of the first layer, is covered with theresin layer, is provided.

According to some other embodiment, an organic device including, on asurface of a substrate, a pixel region in which a plurality of pixelsincluding an organic function layer are arranged, and a peripheralregion including a pad electrode, the organic device comprising a firstlayer containing a compound containing at least oxygen and silicon, asealing layer, and a resin layer stacked in that order from a side ofthe surface, wherein the organic function layer is arranged between thefirst layer and the sealing layer in the pixel region, and the firstlayer, the sealing layer, and the resin layer have openings for exposingthe pad electrode in the peripheral region, the sealing layer includes,from the side of the surface, a second layer and a third layer eachcontaining a compound containing at least nitrogen and silicon, and afourth layer arranged between the second layer and the third layer andcontaining a compound containing at least oxygen and aluminum, an end ofthe opening of the first layer is covered with the second layer, thefourth layer, and the third layer, a step of the second layer, which isarranged above the end of the opening of the first layer, is coveredwith the fourth layer, and a step of the third layer, which is arrangedabove the end of the opening of the first layer, is covered with theresin layer, is provided.

According to still other embodiment, a method of manufacturing anorganic device including, on a surface of a substrate, a pixel region inwhich a plurality of pixels including an organic function layer arearranged, and a peripheral region including a pad electrode, comprising:forming a first layer above the surface of the substrate on which thepad electrode is arranged; etching the first layer by using a maskpattern having an opening above the pad electrode, thereby exposing thepad electrode; forming a plurality of pixels above the first layer inthe pixel region; stacking a sealing layer and a resin layer in thatorder after the forming the plurality of pixels; and exposing the padelectrode by etching the sealing layer and the resin layer by using amask pattern having an opening inside an end of an opening formed in thefirst layer in the etching, in orthographic projection to the surface,wherein the sealing layer includes, from the side of the surface, asecond layer and a third layer each having a water permeability lowerthan that of the first layer, and a fourth layer arranged between thesecond layer and the third layer and having a defect density lower thanthat of the second layer, an end of the opening of the first layer iscovered with the second layer, the fourth layer, and the third layer, inthe portion where the pad electrode is exposed, a step of the secondlayer, which is arranged above the end of the opening of the firstlayer, is covered with the fourth layer, and a step of the third layer,which is arranged above the end of the opening of the first layer, iscovered with the resin layer, is provided.

Further features of the present invention will become apparent from thefollowing description of exemplary embodiments (with reference to theattached drawings).

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view of an organic device according to an embodiment ofthe present invention;

FIGS. 2A to 2C are a sectional view of the organic device shown in FIG.1 , and a sectional view and a plan view of a pad electrode and itsvicinity;

FIGS. 3A and 3B are sectional views of comparative examples of theorganic device shown in FIG. 1 ;

FIGS. 4A and 4B are a sectional view of the organic device shown in FIG.1 , and a sectional view of the pad electrode and its vicinity;

FIGS. 5A to 5C are sectional views of comparative examples of theorganic device shown in FIG. 1 ;

FIGS. 6A and 6B are a sectional view of the organic device shown in FIG.1 , and a sectional view of a pad electrode and its vicinity;

FIGS. 7A to 7C are sectional views of comparative examples of theorganic device shown in FIG. 6A;

FIG. 8 is a sectional view of the organic device shown in FIG. 1 ;

FIG. 9 is a view showing an example of a display apparatus using theorganic device shown in FIG. 1 ;

FIG. 10 is a view showing an example of an imaging apparatus using theorganic device shown in FIG. 1 ;

FIG. 11 is a view showing an example of a portable apparatus using theorganic device shown in FIG. 1 ;

FIGS. 12A and 12B are views showing examples of a display apparatususing the organic device shown in FIG. 1 ;

FIG. 13 is a view showing an example of an illumination apparatus usingthe organic device shown in FIG. 1 ; and

FIG. 14 is a view showing an example of an automobile using the organicdevice shown in FIG. 1 .

DESCRIPTION OF THE EMBODIMENTS

Practical embodiments of an organic device according to the presentinvention will be explained below with reference to the accompanyingdrawings. Note that in the following explanation and drawings, the samereference numerals denote the same components throughout the pluralityof drawings. Therefore, the same components will be explained bymutually referring to the plurality of drawings, and an explanation ofthe components denoted by the same reference numerals will be omitted asneeded.

The structures of the organic devices according to the embodiments ofthe present invention and methods of manufacturing the same will beexplained with reference to FIGS. 1 to 14 . FIG. 1 is a plan viewshowing the structure of an organic device 100 according to the presentinvention. FIG. 2A is a sectional view of the organic device 100 takenalong a line A-A′ in FIG. 1 . FIGS. 2B and 2C are a sectional view and aplan view of a pad electrode 30 and its vicinity of the organic device100.

As shown in FIG. 1 , the organic device 100 includes a pixel region 10in which a plurality of pixels are arranged, and a peripheral region 20including pad electrodes 30. Each pixel arranged in the pixel region 10includes an organic function layer 211 using an organic light-emittingmaterial or an organic photoelectric conversion material, so the organicdevice 100 can function as a light-emitting apparatus includinglight-emitting elements or an imaging apparatus including photoelectricconversion elements. The peripheral region 20 can be so arranged as tosurround the pixel region as shown in FIG. 1 , and can also be arrangedalong one or more sides of the pixel region 10. Circuits for controllingthe pixel region 10 and the like can be arranged in the peripheralregion 20. The pad electrodes 30 arranged in the peripheral region 20are used to exchange signals and the like between the organic device 100and the outside of the organic device 100. For example, the padelectrodes 30 can be used to output signals generated in the organicdevice 100 to the outside, and can also be used to input signals forcontrolling the organic device 100 from outside the organic device 100.For example, the pad electrodes 30 can further be used to supplyelectric power for driving the organic device 100.

As shown in FIG. 2A, the organic device 100 is obtained by stacking aninsulating layer 202 (a first layer), a sealing layer 300, and a resinlayer 400 in that order from the surface of a substrate 201. In thepixel region 10, lower electrodes 210, the organic function layer 211,and an upper electrode 212 are arranged between the insulating layer 202and the sealing layer 300. In the peripheral region 20, the insulatinglayer 202, the sealing layer 300, and the resin layer 400 includeopenings for exposing the pad electrodes 30. In this specification, thesurface of the substrate 201 on which the insulating layer 202, thesealing layer 300, the resin layer 400, and the like are arranged willbe called an upper surface.

The insulating layer 202 is formed by using an insulating material. Theinsulating layer 202 can contain a compound containing at least oxygenand silicon, for example, an inorganic material such as asilicon-oxide-based material. The insulating layer 202 may also beformed by using an organic material such as a thermosetting reins or athermoplastic resin. In this embodiment, the insulating layer 202 isformed by using silicon oxide (SiO_(x)). For example, the insulatinglayer 202 can be formed by a chemical vapor deposition method (CVDmethod) using tetraethoxysilane (TEOS). The insulating layer 202 isrequired to have a high coverage, and TEOS makes it possible to obtainsilicon oxide having a high coverage by a surface reaction via an ethoxygroup. Also, when compared to a case in which the insulating layer 202is formed by using monosilane (SiH₄) gas having pyrophoricity, TEOShaving no pyrophoricity can be handled safely. To ensure insulation andplanarity, the thickness of the insulating layer 202 can be not lessthan 0.5 μm and not more than 5.0 μm.

As the substrate 201, it is possible to use an insulating substrate suchas glass or a resin, a conductive substrate such as aluminum orstainless steel, or a semiconductor substrate such as silicon.Electronic circuits (not shown) such as transistors and wiring patternsare arranged between the substrate 201 and the insulating layer 202.

The lower electrodes 210 are arranged on the insulating layer 202 in thepixel region 10. The lower electrodes 210 are connected to theelectronic circuits arranged between the substrate 201 and theinsulating layer 202 by plug electrodes (not shown) formed by aconductive material such as tungsten. The lower electrodes 210 may alsobe a highly conductive metal material. The lower electrodes 210 can beformed by using a metal material such as aluminum, silver, an aluminumalloy, a silver alloy, titanium, or titanium nitride.

The organic function layer 211 is arranged on the lower electrodes 210.In this embodiment, the organic function layer 211 contains at least anorganic light-emitting material or an organic photoelectric conversionmaterial. The materials to be used in the organic function layer 211will be described later.

The upper electrode 212 is arranged on the organic function layer 211.If the organic function layer 211 contains an organic light-emittingmaterial, the upper electrode 212 is an electrode for emitting lightgenerated by the organic function layer 211. If the organic functionlayer 211 contains an organic photoelectric conversion material, theupper electrode 212 is an electrode for transmitting light to enter theorganic function layer 211. To use a large amount of light, a materialhaving a high light transmittance is used as the organic function layer211. As the upper electrode 212, it is possible to use a transparentoxide conductive material such as tin oxide, indium oxide, indium tinoxide, or indium zinc oxide. A thin-film metal electrode may also beused as the upper electrode 212. In this case, it is possible to use athin film of, for example, gold, platinum, silver, aluminum, chromium,magnesium, or an alloy of these metals. If using the thin-film metalelectrode, the film thickness can be not less than 1 nm and not morethan 30 nm in order to achieve both a high conductivity and theabsorption and suppression of light by the metal. If using magnesium asthe upper electrode 212, water penetration must be suppressed as in theorganic function layer 211, because magnesium easily reacts with water.

The sealing layer 300 is arranged on the upper electrode 212. In thisembodiment, from the upper surface side of the substrate 201, thesealing layer 300 includes water inhibiting layers 301 (a second layer)and 303 (a third layer) having water permeability lower than that of theinsulating layer 202. The sealing layer 300 further includes a defectpreventing layer 302 (a fourth layer) arranged between the waterinhibiting layers 301 and 303, and having defect density lower than thatof the water inhibiting layer 301. In this embodiment, the sealing layer300 has a stack structure including the water inhibiting layers 301 and303 having a low water permeability and the defect preventing layer 302having an extremely high coverage and a low defect density, and hencecan suppress the influence of water in the external atmosphere on theorganic function layer 211.

The water inhibiting layers 301 and 303 can contain a compoundcontaining at least nitrogen and silicon, more specifically, can containa silicon-nitride-based material. For example, the water inhibitinglayers 301 and 303 may also be silicon nitride (SiN) or siliconoxynitride (SiON) formed by using the CVD method. The water inhibitinglayers 301 and 303 using silicon nitride or silicon oxynitride formed bythe CVD method have an extremely low water permeability of about 1×10⁻⁶g/cm²·day. The material of the water inhibiting layers 301 and 303 isnot limited to silicon nitride or silicon oxynitride, and can be anymaterial as long as these layers are formed to have a high lighttransmittance as in the upper electrode 212 and water permeability lowerthan that of the insulating layer 202. For example, the water inhibitinglayers 301 and 303 can be formed to have a water permeability of 1×10⁻⁵g/m²·day or less. The water inhibiting layers 301 and 303 can be layersmade of the same material such as silicon nitride, and can also belayers made of different materials such as silicon nitride and siliconoxynitride. Furthermore, the film thicknesses of the water inhibitinglayers 301 and 303 can be either the same or different.

The defect preventing layer 302 can contain a compound containing atleast oxygen and aluminum, more specifically, can contain analuminum-oxide-based material. For example, the defect preventing layer302 can be aluminum oxide formed by using an atomic layer depositionmethod (ALD method). The substrate 201 on which the water inhibitinglayer 301 is formed is placed in a deposition chamber in a vacuum state,and trimethyl aluminum (TMA) gas is supplied, thereby adsorbing amonoatomic layer of TMA to the surface of the water inhibiting layer301. After that, the TMA gas is exhausted from the deposition chamber.Then, oxygen is supplied, and plasma is generated by inputtinghigh-frequency electric power, thereby oxidizing TMA adsorbed on thesurface of the water inhibiting layer 301. Subsequently, O₂ in thedeposition chamber is exhausted. Consequently, a monoatomic layer ofaluminum oxide is formed on the surface of the water inhibiting layer301. The defect preventing layer 302 using aluminum oxide having adesired film thickness can be formed by repeating this process.

The defect preventing layer 302 formed by the ALD method has high filmdeposition properties in an uneven portion and also has an extremelyhigh coverage, and hence has the feature that the defect density in thefilm is lower than that of a thin film deposited by a sputtering methodor the CVD method. The ALD method has a long deposition time. Therefore,to shorten the tact time for depositing the defect preventing layer 302,the film thickness of the defect preventing layer 302 can be severaltens to hundreds of nm. For example, the film thickness of the defectpreventing layer 302 can be not less than 10 nm and not more than 500nm, and can also be not less than 50 nm and not more than 100 nm. Inthis embodiment, aluminum oxide formed by using the ALD method is usedas the defect preventing layer 302. However, it is also possible to usetitanium oxide, zirconium oxide, or the like. Also, the formation methodis not limited to the ALD method, and it is only necessary to be able toform the defect preventing layer 302 having high film depositionproperties in an uneven portion and a high coverage.

As the resin layer 400, a thermosetting resin, a thermoplastic resin, orthe like can be used. As the resin layer 400, it is possible to use, forexample, a phenol resin, an epoxy resin, a polyimide resin, apolyethylene resin, a polystyrene resin, an acrylic resin, a fluorineresin, or a material mixture of these resins. In addition, a surfacetreatment for improving the water repellency of the surface of the resinlayer 400 may also be performed. For example, it is possible to roughenthe surface of the resin layer 400 by etching the surface, or form afluorine coat on the surface of the resin layer 400 by performing plasmaprocessing using a fluorine-based gas on the surface.

Next, the structure around the pad electrode 30 arranged in theperipheral region 20 in this embodiment will be explained in detailbelow. FIG. 2B is a sectional view of the pad electrode 30 and itsvicinity, and FIG. 2C is a plan view of the pad electrode 30 and itsvicinity. In the peripheral region 20, the insulating layer 202, thesealing layer 300, and the resin layer 400 have openings for exposingthe pad electrode 30. As a consequence, the pad electrode 30 is exposed.A flexible cable for connecting the organic device 100 and the outsideof the organic device 100 is connected to the exposed pad electrode 30by using an anisotropic conductive film (ACF) or the like. In thestructure shown in FIG. 2C, the exposed portion of the pad electrode 30is a square. However, the exposed portion is not limited to a square,and may also be any arbitrary shape such as a rectangle, a trapezoid, ora circle. A material for forming the pad electrode 30 may also be ahighly conductive metal material. For example, it is possible to usemetal materials such as aluminum, copper, silver, molybdenum, titanium,titanium nitride.

In this embodiment, as shown in FIGS. 2A to 2C, an end a of the openingof the insulating layer 202 is covered with the water inhibiting layer301, the defect preventing layer 302, and the water inhibiting layer303. Furthermore, a step S1 of the water inhibiting layer 301 caused bythe end a of the opening of the insulating layer 202 is covered with thedefect preventing layer 302, and a step S2 of the water inhibiting layer303 caused by the end a of the opening of the insulating layer 202 iscovered with the resin layer 400.

In this embodiment, the water inhibiting layer 301 is so formed as tocover the end a of the opening of the insulating layer 202. Theinsulating layer 202 using silicon oxide and having a high waterpermeability is not exposed around the pad electrode 30, but coveredwith the water inhibiting layer 301 using a silicon-nitride-basedmaterial having a low water permeability. For example, the waterpermeability of silicon oxide used in the insulating layer 202 is one tothree orders of magnitude higher than that of the silicon-nitride-basedmaterial used in the water inhibiting layer 301. This makes it possibleto prevent water from penetrating the organic function layer 211 throughthe insulating layer 202.

As described above, the insulating layer 202 has a thickness of about0.5 to 5.0 μm. The water inhibiting layer 301 formed on the insulatinglayer 202 has the step S1 due to this thickness of the insulating layer202. When forming silicon nitride or silicon oxynitride to be used inthe water inhibiting layer 301 by the CVD method, the growth directionand the growth rate change on the upper portion, side surfaces, andbottom portion of an uneven portion such as the step S1, so the filmdensity decrease and the denseness is lost in the step S1 in some cases.Also, an air gap is sometimes formed in a portion where those portionsof silicon nitride or silicon oxynitride, which have grown in differentdirections, collide against each other, thereby forming a gap in thewater inhibiting layer 301. Thus, the step S1 of the water inhibitinglayer 301 can have fragility that increases the defect density. If waterenters from a defect in the step S1 of the water inhibiting layer 301 asdescribed above, the water sometimes enters the insulating layer 202 andpenetrates the organic function layer 211 through the insulating layer202. In the organic device 100 of this embodiment, the defect preventinglayer 302 is so arranged as to cover the step S1 of the water inhibitinglayer 301. Aluminum oxide formed by the ALD method and used in thedefect preventing layer 302 has high film deposition properties and ahigh coverage in an uneven portion, and hence hardly causes a defectsuch as that in the step S1 of the water inhibiting layer 301. Thecoverage of the defect preventing layer 302 will briefly be explained.As an example, the film thickness of that portion of the defectpreventing layer 302, which covers the side surface of the step S1 ofthe water inhibiting layer 301, can be not less than 95% and not morethan 105% of the film thickness of that portion of the defect preventinglayer 302, which covers a relatively flat portion such as the pixelregion 10. As another example, the film thickness of that portion of thedefect preventing layer 302, which covers the side surface of the stepS1 of the water inhibiting layer 301, can be not less than 98% and notmore than 102% of the film thickness of that portion of the defectpreventing layer 302, which covers a relatively flat portion such as thepixel region 10. Since the defect preventing layer 302 reliably coversthe fragile portion of the step S1 of the water inhibiting layer 301 asdescribed above, it is possible to prevent water from entering theorganic function layer 211.

The water inhibiting layer 303 has the step S2 because the defectpreventing layer 302 and the water inhibiting layer 303 are so formed asto cover the step S1 of the water inhibiting layer 301 caused by the enda of the opening of the insulating layer 202. Like the step S1 of thewater inhibiting layer 301, the step S2 of the water inhibiting layer303 can have fragility that increases the defect density. If waterenters from a defect in the step S2 of the water inhibiting layer 303,the water may enter the defect preventing layer 302 using aluminum oxideand corrode (hydrolyze) aluminum oxide. If aluminum oxide comes incontact with a large amount of water at a high temperature, corrosion(hydrolysis) easily occurs. To suppress this corrosion, the resin layer400 is so arranged as to cover the step S2 of the water inhibiting layer303 in the organic device 100 of this embodiment. The water permeabilityof the resin layer 400 is not so low as that of a thin film formed by aninorganic material. However, when the resin layer 400 covers the fragileportion of the step S2 of the water inhibiting layer 303, it is possibleto prevent the defect preventing layer 302 from coming into contact witha large amount of water.

In this embodiment, as shown in FIGS. 2A to 2C, in orthographicprojection to the upper surface of the substrate 201, an end e of theopening of the resin layer 400 is arranged closer to a center p of theexposed pad electrode 30 than the end a of the opening of the insulatinglayer 202. Also, in orthographic projection to the upper surface of thesubstrate 201, an end d of the opening of the water inhibiting layer 303is arranged in the same position as the end e of the opening of theresin layer 400, or arranged closer to the center p of the exposed padelectrode 30 than the end e of the opening of the resin layer 400. Inaddition, in orthographic projection to the upper surface of thesubstrate 201, an end c of the opening of the defect preventing layer302 is arranged in the same position as the end d of the opening of thewater inhibiting layer 303, or arranged closer to the center p of theexposed pad electrode 30 than the end d of the opening of the waterinhibiting layer 303. Furthermore, in orthographic projection to theupper surface of the substrate 201, an end b of the opening of the waterinhibiting layer 301 is arranged in the same position as the end c ofthe opening of the defect preventing layer 302, or arranged closer tothe center p of the exposed pad electrode 30 than the end c of theopening of the defect preventing layer 302. This makes it possible tosuppress an invasion of water from the openings for exposing the padelectrode 30 in the insulating layer 202, the sealing layer 300, andresin layer 400, and improve the reliability of the organic device 100.The center p of the exposed pad electrode 30 may also be the geometricbarycenter of the exposed portion of the pad electrode 30, inorthographic projection to the upper surface of the substrate 201.

FIG. 3A shows an organic device 110 of a comparative example in whichthe step S1 of the water inhibiting layer 301 is not covered with thedefect preventing layer 302. Compared to the organic device 100 of theabove-described embodiment, the end b of the opening of the waterinhibiting layer 301 is arranged closer to the center p of the exposedpad electrode 30 than the end c of the opening of the defect preventinglayer 302. In this case, water may enter from defects that can exist inthe steps S1 and S2 of the water inhibiting layers 301 and 303, andpenetrate the organic function layer 211 through the insulating layer202. For example, characteristic deterioration of the organic device 110is observed if the organic device 110 is left to stand under ahigh-temperature, high-humidity environment for a long time, or left tostand under water for a long time.

FIG. 3B shows an organic device 111 of a comparative example in whichthe step S2 of the water inhibiting layer 303 is not covered with theresin layer 400. Compared to the organic device 100 of theabove-described embodiment, the end a of the opening of the insulatinglayer 202 is arranged closer to the center p of the exposed padelectrode 30 than the end e of the opening of the resin layer 400. Inthis case, water may enter from a defect that can exist in the step S2of the water inhibiting layer 303, and advance the corrosion of aluminumoxide used in the defect preventing layer 302. For example,characteristic deterioration of the organic device 111 is observed ifthe organic device 111 is left to stand under a high-temperature,high-humidity environment for a long time, or left to stand under waterfor a long time.

FIGS. 4A and 4B show a modification of the organic device 100 of thisembodiment. As shown in FIG. 4A, the organic device 100 may also includea color filter 500 on the sealing layer 300. The color filter 500 isarranged on the resin layer 400 to be also used as an underlyingplanarizing layer of the color filter 500, and includes a red filter501, a green filter 502, and a blue filter 503. A planarizing layer 402is further arranged on the color filter 500. The process of forming thecolor filter 500 is performed by repeating material coating, exposure,and development for each color filter. In the arrangement shown in FIG.4A, the resin layer 400 also functions as the color filter planarizinglayer. However, it is also possible to form a planarizing layer (notshown) on the resin layer 400, and form the color filter 500 on theplanarizing layer. FIG. 4B is a sectional view of the pad electrode 30and its vicinity. The resin layer 400 that also functions as theplanarizing layer below the color filter 500 is so arranged as to coverthe step S2 of the water inhibiting layer 303. The resin layer 400 andthe planarizing layer below the color filter 500 are not formed bydifferent processes, but the resin layer 400 is caused to function asthe planarizing layer as well. This can simplify the process and reducethe cost when manufacturing the organic device 100.

The organic function layer 211 will be explained in detail below. Asdescribed above, the organic function layer 211 according to thisembodiment contains at least an organic light-emitting material or anorganic photoelectric conversion material. If the organic function layer211 contains the organic light-emitting material, the organic device 100can function as a light-emitting device. On the other hand, if theorganic function layer 211 contains the organic photoelectric conversionmaterial, the organic device 100 can function as an imaging device.

A well-known organic light-emitting material can be used as the organiclight-emitting material. It is possible to use a light-emitting materialthat singly functions as a light-emitting layer, or use a mixed layer ofa light-emitting layer host material and a light-emitting material.Examples of the organic light-emitting material are condensed-ringcompounds (for example, a fluorene derivative, a naphthalene derivative,a pyrene derivative, a perylene derivative, a tetracene derivative, ananthracene derivative, and rubrene), a quinacridone derivative, acoumarin derivative, a stilbene derivative, an organic aluminum complexsuch as tris(8-quinolinolato)aluminum, an iridium complex, a platinumcomplex, a rhenium complex, a copper complex, a europium complex, aruthenium complex, and polymer derivatives such as apoly(phenylenevinylene) derivative, a poly(fluorene) derivative, and apoly(phenylene) derivative.

Examples of the light-emitting layer host material are an aromatichydrocarbon compound or its derivative, a carbazole derivative, adibenzofuran derivative, a dibenzothiophene derivative, an organicaluminum complex such as tris(8-quinolinolato)aluminum, and an organicberyllium complex.

As the organic photoelectric conversion material, it is possible to usea well-known organic material or organic-inorganic hybrid material.Examples of the organic photoelectric conversion material are afullerene-based material, a phthalocyanine-based material, ametal-complex-based material, a squarylium-based material, anamine-based material, an indan-based material, and a fluorene-basedmaterial. The organic function layer 211 can be made of one or aplurality of these organic photoelectric conversion materials. Theorganic function layer 211 can also have a structure obtained bystacking layers using these materials. As the organic-inorganic hybridmaterial, a material for forming an organic-inorganic hybrid perovskitefilm can be used. This material forming the organic-inorganic hybridperovskite film can be represented by a general formula ABX₃. In thisgeneral formula, A and B are cation materials, and X is an anionmaterial. In the organic-inorganic hybrid material, one of A, B, and Xis an organic material. An example is CH₃NH₃PbI₃ in which A=CH₃NH₃,B=Pb, and X=I.

An additional function layer can be arranged between the organicfunction layer 211 and the lower electrodes 210, or between the organicfunction layer 211 and the upper electrode 212. Examples of theadditional function layer are a charge transporting layer and a chargeblocking layer. An example of the material of the charge transportinglayer is a material having a high hole mobility or electron mobility. Asthe material of a hole blocking layer of the charge blocking layer, itis possible to use a material having a deep HOMO (Highest OccupiedMolecular Orbital) (energetically far from the vacuum level). On theother hand, as the material of an electron blocking layer of the chargeblocking layer, it is possible to use a material having a shallow LUMO(Lowest Unoccupied Molecular Orbital) (close to the vacuum level). TheHOMO and the LUMO can also be expressed as high and low based on themagnitude of an absolute value. More specifically, “the HOMO is deep”may also be expressed as “the HOMO is high”. This similarly applies tothe LUMO.

A charge injection layer can be formed on the interface between thelower electrodes 210 and the additional function layer, or on theinterface between the upper electrode 212 and the additional functionlayer. As an electron injection layer of the charge injection layer, itis possible to use a thin film (for example, 0.5 to 1 nm) of an alkaline(earth) metal or an alkaline (earth) metal compound. Examples of theelectron injection layer are lithium fluoride (LiF), potassium fluoride(KF), and magnesium oxide (MgO). As the electron injection layer of thecharge injection layer, it is also possible to use a layer obtained bymixing a metal or metal compound that functions as a donor(electron-donating) dopant in an organic compound. To improve theelectron injection efficiency, a metal having a low work function or acompound of the metal can be used as a dopant. As the metal having a lowwork function, it is possible to use an alkaline metal, an alkalineearth metal, or a rare-earth metal. An alkaline metal compound that canbe handled relatively easily in the atmosphere may also be used as theelectron injection layer. For example, the alkaline metal compound canbe a cesium compound, and cesium carbonate is stable in the atmosphereand easy to handle. The organic compound of the electron injection layercan also be an electron transporting material, and it is possible to usea well-known material, for example, an aluminum quinolinol complex or aphenanthroline compound. Since the alkaline metal easily reacts withwater, it is necessary to suppress an invasion of water in the samemanner as in the organic function layer 211.

Application examples in which the organic device 100 of this embodimentis applied to a display apparatus, an imaging apparatus, a portableapparatus, an illumination apparatus, and a moving object will beexplained below with reference to FIGS. 9 to 14 . FIG. 9 is a schematicview showing an example of the display apparatus using the organicdevice 100 of this embodiment. A display apparatus 1000 can include atouch panel 1003, a display panel 1005, a frame 1006, a circuit board1007, and a battery 1008 between an upper cover 1001 and a lower cover1009. Flexible printed circuits (FPCs) 1002 and 1004 are respectivelyconnected to the touch panel 1003 and the display panel 1005. Activeelements such as transistors are arranged on the circuit board 1007. Thebattery 1008 is unnecessary if the display apparatus 1000 is not aportable apparatus. Even if the display apparatus 1000 is a portableapparatus, the battery 1008 need not be installed in this position. Asthe display panel 1005, it is possible to use the above-describedorganic device 100 in which the organic function layer 211 contains anorganic light-emitting material and which functions as a light-emittingdevice. The organic device 100 that functions as the display panel 1005operates by being connected to the active elements such as transistorsarranged on the circuit board 1007.

The display apparatus 1000 shown in FIG. 9 may also be used as a displayunit of an imaging apparatus including an optical unit having aplurality of lenses, and an imaging element for receiving light havingpassed through the optical unit. This imaging apparatus can have adisplay unit for displaying information obtained by the imaging element.In addition, the display unit can be either a display unit exposedoutside the imaging apparatus, or a display unit installed in thefinder. The imaging apparatus may also be a digital camera or a digitalvideo camera.

FIG. 10 is a schematic view showing an example of the imaging apparatususing the organic device 100 of this embodiment. An imaging apparatus1100 can include a view finder 1101, a back display 1102, an operationunit 1103, and a housing 1104. As the view finder 1101 as a displayunit, it is possible to use the above-described organic device 100 inwhich the organic function layer 211 contains an organic light-emittingmaterial and which functions as a light-emitting device. In this case,the organic device 100 can display not only an image to be captured butalso environment information, imaging instructions, and the like.Examples of the environment information are the intensity and directionof external light, the moving velocity of an object, and the possibilitythat an object is covered with an obstacle.

The timing suitable for imaging is often a very short time, so theinformation is preferably displayed as soon as possible. Accordingly,the above-described organic device 100 in which the organic functionlayer 211 contains an organic light-emitting material can be used as theview finder 1101. This is so because an organic light-emitting materialhas a high response speed. The organic device 100 using an organiclight-emitting material is more suitable for these apparatuses requiredto have a high display speed, than a liquid crystal display device.

The imaging apparatus 1100 includes an optical unit (not shown). Thisoptical unit has a plurality of lenses, and forms an image of lighthaving passed through the optical unit on an imaging element (not shown)that is accommodated in the housing 1104 and receives the light. Thefocal points of the plurality of lenses can be adjusted by adjusting therelative positions. This operation can also automatically be performed.

The organic device 100 that functions as a light-emitting device canalso include a color filter that transmits red light, green light, andblue light. In this color filter, red, green, and blue can be arrangedin the form of a delta array.

The above-described organic device 100 that contains an organiclight-emitting material and functions as a light-emitting device canalso be used as a display unit of a portable terminal. In this case, theorganic device 100 can have both a display function and an operationfunction. Examples of the portable terminal are a portable phone such asa smartphone, a tablet, and a head mounted display.

FIG. 11 is a schematic view showing an example of the portable apparatususing the organic device 100 of this embodiment. A portable apparatus1200 includes a display unit 1201, an operation unit 1202, and a housing1203. The housing 1203 can accommodate a circuit, a printed board havingthis circuit, a battery, and a communication unit. The operation unit1202 can be either a button or a touch-panel-type reaction unit. Theoperation unit 1202 can also be a biometric authentication unit thatperforms unlocking or the like by authenticating the fingerprint. Aportable apparatus including a communication unit can also be regardedas a communication apparatus. As the display unit 1201, it is possibleto use the above-described organic device 100 in which the organicfunction layer 211 contains an organic light-emitting material and whichfunctions as a light-emitting device.

FIGS. 12A and 12B are schematic views showing examples of the displayapparatus using the organic device 100 of this embodiment. FIG. 12Ashows a display apparatus such as a television monitor or a PC monitor.A display apparatus 1300 includes a frame 1301 and a display unit 1302.As the display unit 1302, it is possible to use the above-describedorganic device 100 in which the organic function layer 211 contains anorganic light-emitting material and which functions as a light-emittingdevice. The display apparatus 1300 may also include a base 1303 thatsupports the frame 1301 and the display unit 1302. The base 1303 is notlimited to the form shown in FIG. 12A. For example, the lower side ofthe frame 1301 may also function as the base 1303. In addition, theframe 1301 and the display unit 1302 can be bent. The radius ofcurvature in this case can be not less than 5,000 mm and not more than6,000 mm.

FIG. 12B is a schematic view showing another example of the displayapparatus using the organic device 100 of this embodiment. A displayapparatus 1310 shown in FIG. 12B can be folded, that is, the displayapparatus 1310 is a so-called foldable display apparatus. The displayapparatus 1310 includes a first display unit 1311, a second display unit1312, a housing 1313, and a bending point 1314. As the first displayunit 1311 and the second display unit 1312, it is possible to use theabove-described organic device 100 in which the organic function layer211 contains an organic light-emitting material and which functions as alight-emitting device. The first display unit 1311 and the seconddisplay unit 1312 can also be one seamless display device. The firstdisplay unit 1311 and the second display unit 1312 can be divided fromthe bending point. The first display unit 1311 and the second displayunit 1312 can display different images, and can also display one imagetogether.

FIG. 13 is a schematic view showing an example of the illuminationapparatus using the organic device 100 of this embodiment. Anillumination apparatus 1400 can include a housing 1401, a light source1402, a circuit board 1403, an optical film 1404, and a light-diffusingunit 1405. As the light source 1402, it is possible to use theabove-described organic device 100 in which the organic function layer211 contains an organic light-emitting material and which functions as alight-emitting device. The optical film 1404 can be a filter thatimproves the color rendering of the light source. When performinglighting-up or the like, the light-diffusing unit 1405 can throw thelight of the light source over a broad range by effectively diffusingthe light. The illumination apparatus 1400 can also include a cover onthe outermost portion. The illumination apparatus 1400 can include boththe optical film 1404 and the light-diffusing unit 1405, and can alsoinclude only one of them.

The illumination apparatus 1400 is an apparatus for illuminating theroom or the like. The illumination apparatus 1400 can emit white light,natural white light, or light of any color from blue to red. Theillumination apparatus 1400 can also include a light control circuit forcontrolling these light components. The illumination apparatus 1400 canalso include a power supply circuit to be connected to the organicdevice 100 that functions as the light source 1402. This power supplycircuit is a circuit for converting an AC voltage into a DC voltage.“White” has a color temperature of 4,200 K, and “natural white” has acolor temperature of 5,000 K. The illumination apparatus 1400 may alsohave a color filter. In addition, the illumination apparatus 1400 canhave a heat radiation unit. The heat radiation unit radiates theinternal heat of the apparatus to the outside of the apparatus, andexamples are a metal having a high specific heat and liquid silicon.

FIG. 14 is a schematic view of an automobile including a taillight as anexample of a vehicle lighting appliance using the organic device 100 ofthis embodiment. An automobile 1500 has a taillight 1501, and thetaillight 1501 is turned on when performing a braking operation or thelike. An automobile is an example of a moving object, and the movingobject can also be a ship or a drone. This moving object can include amain body and a lighting appliance installed in the main body. Thelighting appliance may also be an apparatus that notifies the currentposition of the main body.

As the taillight 1501, it is possible to use the above-described organicdevice 100 in which the organic function layer 211 contains an organiclight-emitting material and which functions as a light-emitting device.The taillight 1501 can include a protective member for protecting theorganic device 100 that functions as the taillight 1501. This protectivemember can be made of any transparent material having strength that ishigh to some extent, and an example is polycarbonate. The protectivemember can also be formed by mixing a furan dicarboxylic acidderivative, an acrylonitrile derivative, or the like in polycarbonate.

The automobile 1500 can also include a main body 1503, and a window 1502attached to the main body 1503. This window can be a window for checkingthe front and rear of the automobile, and can also be a transparentdisplay. As this transparent display, it is possible to use theabove-described organic device 100 in which the organic function layer211 contains an organic light-emitting material and which functions as alight-emitting device. In this case, the constituent members such as theelectrodes of the organic device 100 are made of transparent materials.

Examples and comparative examples of the organic device 100 of thisembodiment will be explained below.

First Example

The organic device 100 shown in FIGS. 4A and 4B was manufactured. Inthis example, the organic function layer 211 contains an organiclight-emitting material. Accordingly, the organic device 100 functionsas a light-emitting device.

First, a silicon substrate was prepared as the substrate 201. Afterelectronic circuits (not shown) and pad electrodes 30 were formed on thesubstrate 201, an insulating layer 202 was formed on the surface of thesubstrate 201 on which the electronic circuits (not shown) and the padelectrodes 30 using an aluminum alloy were arranged. In this example, a1-μm thick silicon oxide layer was formed as the insulating layer 202.Then, a mask pattern having openings above the pad electrodes 30 wasused to etch the insulating layer 202 below the openings of the maskpattern, thereby performing an etching step of exposing the padelectrodes 30. First, a mask pattern having desired openings was formedby resist coating, exposure, and development, and the insulating layer202 was etched by plasma etching using a reactive gas in a dry etchingapparatus. After the insulating layer 202 was etched, the mask patternwas removed by a stripping solution.

Then, in the pixel region 10, a pixel formation step of forming aplurality of pixels on the insulating layer 202 was performed. First,lower electrodes 210 were formed by sequentially stacking an aluminumalloy and indium tin oxide on the insulating layer 202 from the uppersurface side of the substrate 201. As described previously, the lowerelectrodes 210 were connected to the electronic circuits arranged onthat side of the insulating layer 202, which faced the substrate 201, byplug electrodes formed in the insulating layer 202.

After the lower electrodes 210 were formed, an organic function layer211 containing an organic light-emitting material was formed on thelower electrodes 210 in the pixel region 10. As a method of forming theorganic function layer 211, vacuum vapor deposition using a vapordeposition mask having a desired opening pattern can be used.

After the organic function layer 211 was formed, a 0.5-nm thick electroninjection layer (not shown) using lithium fluoride (LiF) was formed onthe organic function layer 211, and a 10-nm thick upper electrode 212was formed on the electron injection layer by using a silver-magnesiummixed film (volume ratio=1:1). As a method of forming the upperelectrode 212, vacuum vapor deposition using a vapor deposition maskhaving a desired opening pattern can be used.

After the pixel formation step of forming a plurality of pixels on theinsulating layer 202, a sealing layer 300 and a resin layer 400 werestacked in that order. First, the sealing layer 300 was so formed as tocover the whole substrate 201. That is, a 1,500-nm thick silicon nitridelayer was formed as a water inhibiting layer 301 on the entire surfaceof the substrate 201 by using the CVD method. Then, a 100-nm thickaluminum oxide layer was formed as a defect preventing layer 302 on theentire surface of the substrate 201 by using the ALD method, so as tocover the water inhibiting layer 301. In addition, a 500-nm thicksilicon nitride layer was formed as a water inhibiting layer 303 on theentire surface of the substrate 201 by using the CVD method, so as tocover the defect preventing layer 302. Then, the entire surface of thesubstrate 201 was coated with a 400-nm thick resin layer as the resinlayer 400 by using the spin coating method, so as to cover the waterinhibiting layer 303, and the resin layer 400 was calcined at a hightemperature. As described earlier, the resin layer 400 also functions asa planarizing layer below the color filter 500.

Subsequently, a color filter 500 was formed in the pixel region 10. Ared filter 501, a green filter 502, and a blue filter 503 were formed byrepeating material coating, exposure, and development for the colorfilter of each color. After the color filter 500 was formed, aplanarizing layer 402 was formed by coating a 400-nm thick resin layerby the spin coating method, and calcining the resin layer at a hightemperature.

After the planarizing layer 402 was formed, the planarizing layer 402,the resin layer 400, and the sealing layer 300 on the pad electrodes 30were etched by dry etching, thereby exposing the pad electrodes 30. Byetching the planarizing layer 402, the resin layer 400, and the sealinglayer 300 in one etching step, it was possible to simplify themanufacturing process of the organic device 100 and reduce themanufacturing cost. More specifically, a mask pattern having an openinginside the end of the opening formed in the insulating layer 202 by theetching step of the above-described insulating layer 202, inorthographic projection to the upper surface of the substrate 201, wasformed by using resist coating, exposure, and development. Then, theplanarizing layer 402, the resin layer 400, and the sealing layer 300were etched by plasma etching using a reactive gas in a dry etchingapparatus. After the planarizing layer 402, the resin layer 400, and thesealing layer 300 were etched, the mask pattern was removed by astripping solution.

By the above steps, as shown in FIG. 4B, the water inhibiting layer 301was so formed as to cover the end a of the opening of the insulatinglayer 202. Also, the defect preventing layer 302 was so formed as tocover the step S1 of the water inhibiting layer 301. In addition, theresin layer 400 was so formed as to cover the step S2 of the waterinhibiting layer 303. The openings of the mask pattern and theconditions of dry etching in each step were adjusted such that thedefect preventing layer 302 covering the step S1 of the water inhibitinglayer 301 was not removed by side etching or the like. Likewise, theopenings of the mask pattern and the conditions of dry etching in eachstep were adjusted such that the resin layer 400 covering the step S2 ofthe water inhibiting layer 303 was not removed.

By the above steps, in orthographic projection to the upper surface ofthe substrate 201, the end e of the opening of the resin layer 400 wasarranged closer to the center p of the exposed pad electrode 30 than theend a of the opening of the insulating layer 202. Also, in orthographicprojection to the upper surface of the substrate 201, the end d of theopening of the water inhibiting layer 303 was arranged in the sameposition as the end e of the opening of the resin layer 400, or arrangedcloser to the center p of the exposed pad electrode 30 than the end e ofthe opening of the resin layer 400. In addition, in orthographicprojection to the upper surface of the substrate 201, the end c of theopening of the defect preventing layer 302 was arranged in the sameposition as the end d of the opening of the water inhibiting layer 303,or arranged closer to the center p of the exposed pad electrode 30 thanthe end d of the opening of the water inhibiting layer 303. Furthermore,in orthographic projection to the upper surface of the substrate 201,the end b of the opening of the water inhibiting layer 301 was arrangedin the same position as the end c of the opening of the defectpreventing layer 302, or arranged closer to the center p of the exposedpad electrode 30 than the end c of the opening of the defect preventinglayer 302. This positional relationship between the ends a to e of theopenings was obtained because, when the sealing layer 300 and the resinlayer 400 were dry-etched by using the same mask pattern, side etchingetched upper layers more inward than lower layers.

The organic device 100 of this example was able to suppress an invasionof water to the organic function layer 211. More specifically, theorganic device 100 of the present invention was a light-emitting deviceas described previously, so the luminous efficiency (cd/A) when adesired voltage was applied was measured. In addition, a humidityresistance test was conducted by a pressure cooker capable of conductingthe test in a high-density water vapor atmosphere. After the organicdevice 100 was left to stand in a high-density water vapor atmosphere at100° C. or more for 1,000 hrs or more, the luminous efficiency (cd/A) ofthe organic device 100 was measured. Consequently, no significantdecrease in luminous efficiency was confirmed.

First Comparative Example

An organic device 112 shown in FIG. 5A was manufactured as an organicdevice of a comparative example. In the above-described first example,the etching step of exposing the pad electrodes 30 was performed twice.More specifically, after etching for exposing the pad electrodes 30 ofthe insulating layer 202 was performed, the sealing layer 300 and theresin layer 400 were formed, and etching for exposing the pad electrodes30 of the sealing layer 300 and the resin layer 400 was performed. Onthe other hand, in this comparative example, all of the insulating layer202, the sealing layer 300, and the resin layer 400 (and the planarizinglayer 402) were etched by dry etching by using the same mask pattern. Asa consequence, the end of the opening of the insulating layer 202 wasnot covered with the water inhibiting layer 301 but exposed. The organicdevice 112 was manufactured by using the same steps as in the firstexample described above except the above step.

A humidity resistance test of the organic device 112 of this comparativeexample was conducted in a pressure cooker capable of conducting thetest in a high-density water vapor atmosphere. After the organic device112 was left to stand in a high-density water vapor atmosphere at 100°C. or more for 1,000 hrs or more, the luminous efficiency (cd/A) of theorganic device 112 was measured. Consequently, the luminous efficiencydecreased by about 20%.

Second Comparative Example

An organic device 113 was manufactured by using the same steps as in thefirst example described above. As shown in FIG. 5B, when etching thesealing layer 300 and the resin layer 400 of the organic device 113,side etching removed the defect preventing layer 302 covering the stepS1 of the water inhibiting layer 301. As a consequence, the side surfaceof the step S1 of the water inhibiting layer 301 was exposed.

A humidity resistance test of the organic device 113 of this comparativeexample was conducted in a pressure cooker capable of conducting thetest in a high-density water vapor atmosphere. After the organic device113 was left to stand in a high-density water vapor atmosphere at 100°C. or more for 1,000 hrs or more, the luminous efficiency (cd/A) of theorganic device 113 was measured. Consequently, the luminous efficiencydecreased by about 12%.

Third Comparative Example

An organic device 114 was manufactured by using the same steps as in thefirst example described above. As shown in FIG. 5C, when etching thesealing layer 300 and the resin layer 400 of the organic device 114,side etching removed the resin layer 400 (and the planarizing layer 402)covering the step S2 of the water inhibiting layer 303. As aconsequence, the side surface and bottom portion of the step S2 of thewater inhibiting layer 303 were exposed.

A humidity resistance test of the organic device 114 of this comparativeexample was conducted in a pressure cooker capable of conducting thetest in a high-density water vapor atmosphere. After the organic device114 was left to stand in a high-density water vapor atmosphere at 100°C. or more for 1,000 hrs or more, the luminous efficiency (cd/A) of theorganic device 114 was measured. Consequently, the luminous efficiencydecreased by about 5%.

Second Example

An organic device 101 shown in FIGS. 6A and 6B was manufactured. In thisexample, the organic function layer 211 contains an organicphotoelectric conversion material. Accordingly, the organic device 101functions as an imaging device.

First, a silicon substrate was prepared as the substrate 201. Afterelectronic circuits (not shown) and pad electrodes 30 were formed on thesubstrate 201, an insulating layer 202 was formed on the surface of thesubstrate 201 on which the electronic circuits (not shown) and the padelectrodes 30 using an aluminum alloy were arranged. In this example, a1.5-μm thick silicon oxide layer was formed as the insulating layer 202.Then, a mask pattern having openings above the pad electrodes 30 wasused to etch the insulating layer 202 below the openings of the maskpattern, thereby performing an etching step of exposing the padelectrodes 30. First, a mask pattern having desired openings was formedby resist coating, exposure, and development, and the insulating layer202 was etched by plasma etching using a reactive gas in a dry etchingapparatus. After the insulating layer 202 was etched, the mask patternwas removed by a stripping solution.

Then, in the pixel region 10, a pixel formation step of forming aplurality of pixels on the insulating layer 202 was performed. First,lower electrodes 210 using titanium nitride were formed on theinsulating layer 202. As described previously, the lower electrodes 210were connected to the electronic circuits arranged on that side of theinsulating layer 202, which faced the substrate 201, by plug electrodesformed in the insulating layer 202.

After the lower electrodes 210 were formed, an organic function layer211 containing an organic photoelectric conversion material was formedon the lower electrodes 210 in the pixel region 10. As a method offorming the organic function layer 211, vacuum vapor deposition using avapor deposition mask having a desired opening pattern can be used.

After the organic function layer 211 was formed, a 30-nm thick upperelectrode 212 using indium zinc oxide was formed. As a method of formingthe upper electrode 212, a sputtering method using a deposition maskhaving a desired opening pattern can be used.

After a pixel formation step of forming a plurality of pixels on theinsulating layer 202, a sealing layer 300 and a resin layer 400 werestacked in that order. First, the sealing layer 300 was so formed as tocover the whole substrate 201. That is, a 2,000-nm thick siliconoxynitride layer was formed as a water inhibiting layer 301 on theentire surface of the substrate 201 by using the CVD method. Then, a50-nm thick aluminum oxide layer was formed as a defect preventing layer302 on the entire surface of the substrate 201 by using the ALD method,so as to cover the water inhibiting layer 301. In addition, a 500-nmthick silicon oxynitride layer was formed as a water inhibiting layer303 on the entire surface of the substrate 201 by using the CVD method,so as to cover the defect preventing layer 302. Then, the entire surfaceof the substrate 201 was coated with a 600-nm thick resin layer as theresin layer 400 by using the spin coating method, so as to cover thewater inhibiting layer 303, and the resin layer 400 was calcined at ahigh temperature. As described earlier, the resin layer 400 alsofunctions as a planarizing layer below the color filter 500.

Subsequently, a color filter 500 was formed in the pixel region 10. Ared filter 501, a green filter 502, and a blue filter 503 were formed byrepeating material coating, exposure, and development for the colorfilter of each color.

After the color filter 500 was formed, the resin layer 400 and thesealing layer 300 on the pad electrodes 30 were etched by dry etching,thereby exposing the pad electrodes 30. By etching the resin layer 400and the sealing layer 300 in one etching step, it was possible tosimplify the manufacturing process of the organic device 101 and reducethe manufacturing cost. More specifically, a mask pattern having anopening inside the end of the opening formed in the insulating layer 202by the above-described insulating layer 202 etching step, inorthographic projection to the upper surface of the substrate 201, wasformed by using resist coating, exposure, and development. Then, theresin layer 400 and the sealing layer 300 were etched by plasma etchingusing a reactive gas in a dry etching apparatus. After the resin layer400 and the sealing layer 300 were etched, the mask pattern was removedby a stripping solution.

By the above steps, as shown in FIG. 6B, the water inhibiting layer 301was so formed as to cover the end a of the opening of the insulatinglayer 202. Also, the defect preventing layer 302 was so formed as tocover the step S1 of the water inhibiting layer 301. In addition, theresin layer 400 was so formed as to cover the step S2 of the waterinhibiting layer 303. In this example, the resin layer 400 was formed onthe pixel region 10 and the step S2 of the water inhibiting layer 303.This is so because dry etching for etching the sealing layer 300 and theresin layer 400 removed the resin layer 400 in the corresponding portiontogether with the mask pattern. When forming the water inhibiting layers301 and 303 using silicon nitride or silicon oxynitride by using the CVDmethod or the like, a defect such as the formation of an air gap havinga low film density and lacking denseness easily occurs on the sidesurface or in the intersection of the side surface and the bottomportion of the steps S1 and S2. As shown in FIG. 6B, therefore, theresin layer 400 covers at least the step S2 of the water inhibitinglayer 303 in the peripheral region 20, and this makes it possible tosuppress an invasion of water to the defect preventing layer 302 via thestep S2 of the water inhibiting layer 303. Since the resin layer 400covers the side surface of the step S2 of the water inhibiting layer303, it is possible to simultaneously cover the intersection of the sidesurface and the bottom portion of the step S2 of the water inhibitinglayer 303. Like the organic device 100 described above, the reliabilityof the organic device 101 can improve in the structure shown in FIG. 6Bas well. Also, if the organic function layer 211 of the organic device101 contains an organic light-emitting material, the organic device 101can function as a light-emitting device. In this case, the organicdevice 101 is applicable to each of the display apparatuses 1000, 1300,and 1310, the imaging apparatus 1100, the portable apparatus 1200, theillumination apparatus 1400, and the automobile 1500 shown in FIGS. 9 to14 , like the organic device 100.

After the pad electrodes 30 were exposed, a 600-nm thick resin layer wasapplied as a planarizing layer 402 by the spin coating method, andpatterned into a desired shape. As shown in FIG. 6B, the peripheralregion 20 can include a portion where the water inhibiting layer 303 wasexposed. Then, a microlens (not shown) for increasing the lightcollection efficiency was formed on the planarizing layer 402. Theplanarizing layer 402 must have a high planarity in order to accuratelyform the shape of the microlens.

The organic device 101 of this example was able to suppress an invasionof water to the organic function layer 211. More specifically, theorganic device 101 of the present invention was an imaging device asdescribed above, so the sensitivity (e⁻/lx·s·μm²) per unit area when adesired voltage was applied was measured. In addition, a humidityresistance test was conducted by a pressure cooker capable of conductingthe test in a high-density water vapor atmosphere. After the organicdevice 101 was left to stand in a high-density water vapor atmosphere at100° C. or more for 1,000 hrs or more, the sensitivity (e⁻/lx·s·μm²) wasmeasured. Consequently, no significant decrease in sensitivity wasconfirmed.

Third Example

An organic device 118 shown in FIG. 8 was manufactured. In this example,the organic function layer 211 contains an organic photoelectricconversion material. Accordingly, the organic device 118 functions as animaging device.

First, a silicon substrate was prepared as the substrate 201. Afterelectronic circuits (not shown) and pad electrodes 30 were formed on thesubstrate 201, an insulating layer 202 was formed on the surface of thesubstrate 201 on which the electronic circuits (not shown) and the padelectrodes 30 using an aluminum alloy were arranged. In this example, a1.5-μm thick silicon oxide layer was formed as the insulating layer 202.

Then, in the pixel region 10, a pixel formation step of forming aplurality of pixels on the insulating layer 202 was performed. First,lower electrodes 210 using a single-layered or multilayered alloycontaining titanium or aluminum were formed on the insulating layer 202.As described previously, the lower electrodes 210 were connected to theelectronic circuits formed on that side of the insulating layer 202,which faced the substrate 201, by plug electrodes formed in theinsulating layer 202.

Then, an insulating layer 801 for reducing a current leak betweenelectrodes was formed on the surface of the substrate 201 on which thelower electrodes 210 and the insulating layer 202 were formed.Subsequently, a mask pattern having openings above the pad electrodes 30was used to etch the insulating layer 202 and the insulating layer 801below the openings of the mask pattern, thereby performing an etchingstep of exposing the pad electrodes 30. First, a mask pattern havingdesired openings was formed by using resist coating, exposure, anddevelopment, and the insulating layer 202 was etched by plasma etchingusing a reactive gas in a dry etching apparatus. After the insulatinglayer 202 was etched, the mask pattern was removed by a strippingsolution.

Then, a mask pattern having openings above the lower electrodes 210 wasused to etch the insulating layer 801 below the openings of the maskpattern, thereby performing an etching step of exposing the lowerelectrodes 210. First, a mask pattern having desired openings was formedby using resist coating, exposure, and development, and the insulatinglayer 801 was etched by plasma etching using a reactive gas in a dryetching apparatus, thereby forming insulating layers 801 covering theside surfaces of the lower electrodes 210. After the etching for formingthe insulating layers 801, the mask pattern was removed by a strippingsolution. To suppress the formation of a modified layer by the strippingsolution on the surfaces of the lower electrodes 210, it is possible toetch the insulating layer 202 and the insulating layer 801 on the padelectrodes 30, and then etch the insulating layer 801 on the lowerelectrodes 210, as disclosed in this example.

After the insulating layer 801 on the lower electrodes 210 was etched,an organic function layer 211 containing an organic photoelectricconversion material was formed on the lower electrodes 210 in the pixelregion 10. As a method of forming the organic function layer 211, vacuumvapor deposition using a vapor deposition mask having a desired openingpattern can be used. By this step, a plurality of lower electrodes 210are arranged between the insulating layer 202 and the organic functionlayer 211.

After the organic function layer 211 was formed, a 30-nm thick upperelectrode 212 using silver and magnesium was formed. As a method offorming the upper electrode 212, a sputtering method using a depositionmask having a desired opening pattern can be used.

After a pixel formation step of forming a plurality of pixels on theinsulating layer 202, a sealing layer 300 and a resin layer 400 werestacked in that order. First, the sealing layer 300 was so formed as tocover the whole substrate 201. That is, a 2,000-nm thick siliconoxynitride layer was formed as a water inhibiting layer 301 on theentire surface of the substrate 201 by using the CVD method. Then, a50-nm thick aluminum oxide layer was formed as a defect preventing layer302 on the entire surface of the substrate 201 by using the ALD method,so as to cover the water inhibiting layer 301. In addition, a 500-nmthick silicon oxynitride layer was formed as a water inhibiting layer303 on the entire surface of the substrate 201 by using the CVD method,so as to cover the defect preventing layer 302. Then, the entire surfaceof the substrate 201 was coated with a 600-nm thick resin layer as theresin layer 400 by using the spin coating method, so as to cover thewater inhibiting layer 303, and the resin layer 400 was calcined at ahigh temperature. As described earlier, the resin layer 400 alsofunctions as a planarizing layer below the color filter 500.

Subsequently, a color filter 500 was formed in the pixel region 10. Ared filter 501, a green filter 502, and a blue filter 503 were formed byrepeating material coating, exposure, and development for the colorfilter of each color.

After the color filter 500 was formed, the resin layer 400 and thesealing layer 300 on the pad electrodes 30 were etched by dry etching,thereby exposing the pad electrodes 30. By etching the resin layer 400and the sealing layer 300 in one etching step, it was possible tosimplify the manufacturing process of the organic device 101 and reducethe manufacturing cost. More specifically, a mask pattern having anopening inside the end of the opening formed in the insulating layer 202by the above-described insulating layer 202 etching step, inorthographic projection to the upper surface of the substrate 201, wasformed by using resist coating, exposure, and development. Then, theresin layer 400 and the sealing layer 300 were etched by plasma etchingusing a reactive gas in a dry etching apparatus. After the resin layer400 and the sealing layer 300 were etched, the mask pattern was removedby a stripping solution.

By the above steps, the water inhibiting layer 301 was so formed as tocover the end a of the opening of the insulating layer 202, as shown inFIG. 8 . Also, the defect preventing layer 302 was so formed as to coverthe step S1 of the water inhibiting layer 301. In addition, the resinlayer 400 was so formed as to cover the step S2 of the water inhibitinglayer 303. The organic device 118 of this example has a structure inwhich the insulating layer 801 covering the side surface of each lowerelectrode 210 is added to the organic device 101 in order to suppress aleakage electric current between the lower electrodes 210. Therefore,the steps after the resin layer 400 is formed can be the same as thoseof the second example described above, so an explanation thereof will beomitted.

The organic device 118 of this example was able to suppress an invasionof water to the organic function layer 211. Also, a similar humidityresistance test as that of the organic device 101 described above wasconducted, and no significant decrease in sensitivity was confirmed.That is, like the organic device 101 described above, the reliability ofthe organic device 118 can improve in the structure shown in FIG. 8 aswell. Also, if the organic function layer 211 of the organic device 118contains an organic light-emitting material, the organic device 118 canfunction as a light-emitting device. In this case, the organic device118 is applicable to each of the display apparatuses 1000, 1300, and1310, the imaging apparatus 1100, the portable apparatus 1200, theillumination apparatus 1400, and the automobile 1500 shown in FIGS. 9 to14 , like the organic device 100.

Fourth Comparative Example

An organic device 115 shown in FIG. 7A was manufactured as an organicdevice of a comparative example. In the above-described second example,the etching step of exposing the pad electrodes 30 was performed twice.More specifically, after etching for exposing the pad electrodes 30 ofthe insulating layer 202 was performed, the sealing layer 300 and theresin layer 400 were formed, and etching for exposing the pad electrodes30 of the sealing layer 300 and the resin layer 400 was performed. Onthe other hand, in this comparative example, all of the insulating layer202, the sealing layer 300, and the resin layer 400 were etched by dryetching by using the same mask pattern. As a consequence, the end of theopening of the insulating layer 202 was not covered with the waterinhibiting layer 301 but exposed. The organic device 115 wasmanufactured by using the same steps as in the first example describedabove except the above step.

A humidity resistance test of the organic device 115 of this comparativeexample was conducted in a pressure cooker capable of conducting thetest in a high-density water vapor atmosphere. After the organic device115 was left to stand in a high-density water vapor atmosphere at 100°C. or more for 1,000 hrs or more, the sensitivity (e⁻/lx·s·μm²) of theorganic device 115 was measured. Consequently, the sensitivity decreasedby about 22%.

Fifth Comparative Example

An organic device 116 was manufactured by using the same steps as in thesecond example described above. As shown in FIG. 7B, when etching thesealing layer 300 and the resin layer 400 of the organic device 116,side etching removed the defect preventing layer 302 covering the stepS1 of the water inhibiting layer 301. As a consequence, the side surfaceof the step S1 of the water inhibiting layer 301 was exposed.

A humidity resistance test of the organic device 116 of this comparativeexample was conducted in a pressure cooker capable of conducting thetest in a high-density water vapor atmosphere. After the organic device116 was left to stand in a high-density water vapor atmosphere at 100°C. or more for 1,000 hrs or more, the sensitivity (e⁻/lx·s·μm²) of theorganic device 116 was measured. Consequently, the sensitivity decreasedby about 16%.

Sixth Comparative Example

An organic device 117 was manufactured by using the same steps as in thesecond example described above. As shown in FIG. 7C, when etching thesealing layer 300 and the resin layer 400 of the organic device 117,side etching removed the resin layer 400 covering the step S2 of thewater inhibiting layer 303. As a consequence, the side surface andbottom portion of the step S2 of the water inhibiting layer 303 wereexposed.

A humidity resistance test of the organic device 117 of this comparativeexample was conducted in a pressure cooker capable of conducting thetest in a high-density water vapor atmosphere. After the organic device117 was left to stand in a high-density water vapor atmosphere at 100°C. or more for 1,000 hrs or more, the sensitivity (e⁻/lx·s·μm²) of theorganic device 117 was measured. Consequently, the sensitivity decreasedby about 7%.

As described above, compared to the organic devices 112 to 114 of thefirst to third comparative examples, the organic device 100 of the firstexample did not decrease the luminous efficiency. Also, compared to theorganic devices 115 to 117 of the fourth to sixth comparative examples,the organic devices 101 and 118 of the second and third examples did notdecrease the sensitivity. Thus, the reliability of an organic device canimprove by the use of the structure disclosed in this example.

While the present invention has been described with reference toexemplary embodiments, it is to be understood that the invention is notlimited to the disclosed exemplary embodiments. The scope of thefollowing claims is to be accorded the broadest interpretation so as toencompass all such modifications and equivalent structures andfunctions.

What is claimed is:
 1. An organic device including a substrate surfaceproviding a pixel region in which a plurality of pixels are arranged anda peripheral region including a pad electrode, the organic devicecomprising a first layer, an organic function layer, a second layer, afourth layer, and a resin layer in that order from a side of thesubstrate surface in the pixel region, the organic device comprising thepad electrode, the first layer, and the second layer in that order fromthe side of the substrate surface in the peripheral region, the firstlayer and the second layer each having openings for exposing the padelectrode in the peripheral region, wherein the second layer contains acompound comprising nitrogen and silicon, wherein the fourth layercontains a compound comprising oxygen and aluminum, and wherein, in anorthographic projection to the substrate surface, an end of the openingof the second layer is arranged between an end of the opening of thefirst layer and a center of the exposed pad electrode.
 2. An organicdevice including a substrate surface providing a pixel region in which aplurality of pixels are arranged and a peripheral region including a padelectrode, the organic device comprising a first layer, an organicfunction layer, a second layer, a forth layer, and a resin layer in thatorder from a side of the substrate surface in the pixel region, theorganic device comprising the pad electrode, the first layer, and thesecond layer in that order from the side of the substrate surface in theperipheral region, the first layer and the second layer each havingopenings for exposing the pad electrode in the peripheral region,wherein the second layer has a water permeability lower than that of thefirst layer, wherein the fourth layer has a defect density lower thanthat of the second layer, and wherein, in an orthographic projection tothe substrate surface, an end of the opening of the second layer isarranged between an end of the opening of the first layer and a centerof the exposed pad electrode.
 3. The device according to claim 1,wherein the forth layer extends from the pixel region to the peripheralregion, and wherein, in the orthographic projection to the substratesurface, an end of the fourth layer is arranged between the end of theopening of the first layer and the end of the opening of the secondlayer.
 4. The device according to claim 1, wherein the second layercomprises a step that is arranged above the end of the opening of thefirst layer, the step being covered by the fourth layer in theperipheral region.
 5. The device according to claim 1, furthercomprising a third layer arranged between the fourth layer and the resinlayer in the pixel region.
 6. The device according to claim 5, whereinthe third layer has a water permeability lower than that of the firstlayer.
 7. The device according to claim 1, wherein the first layer has athickness of 0.5 to 5.0 μm.
 8. The device according to claim 1, whereinthe fourth layer comprises aluminum oxide.
 9. The device according toclaim 8, wherein the first layer comprises silicon oxide and the secondlayer comprises silicon nitride.
 10. The device according to claim 6,wherein the first layer comprises silicon oxide, the second layer andthe third layer each comprises silicon nitride, and the fourth layercomprises aluminum oxide.
 11. The device according to claim 1, furthercomprising a color filter arranged above the resin layer in the pixelregion.
 12. The device according to claim 1, wherein the organicfunction layer comprises an organic light-emitting material.
 13. Thedevice according to claim 1, wherein the organic function layercomprises an organic photoelectric conversion material.
 14. The deviceaccording to claim 1, further comprising a plurality of lower electrodesarranged between the first layer and the organic function layer, whereina side surface of each of the plurality of lower electrodes is coveredwith an insulating layer.
 15. The device according to claim 2, whereinthe water permeability of the second layer is not more than 1×10⁻⁵g/m²·day.
 16. A display apparatus comprising: an organic deviceaccording to claim 1; and an active element connected to the organicdevice.
 17. An imaging apparatus comprising an optical unit including: aplurality of lenses; an imaging element configured to receive lighthaving passed through the optical unit; and a display unit configured todisplay an image, wherein the display unit is configured to display animage obtained by the imaging element, and comprises the organic deviceaccording to claim
 1. 18. An illumination apparatus comprising: a lightsource; and at least one of a light diffusing unit and an optical film,wherein the light source comprises the organic device according toclaim
 1. 19. A moving object comprising: a main body; and a lightingappliance installed in the main body, wherein the lighting appliancecomprises the organic device according to claim
 1. 20. The deviceaccording to claim 1, wherein a defect density of the fourth layer islower than that of the second layer.
 21. An organic device including asubstrate providing a pixel region in which a plurality of pixels arearranged and a peripheral region including a pad electrode, the organicdevice comprising a first layer, an organic function layer, a fourthlayer, and a third layer in this order from a side of the substrate, thefirst layer and the fourth layer each having openings for exposing thepad electrode in the peripheral region, wherein the third layer containsa compound comprising nitrogen and silicon, wherein the fourth layercontains a compound comprising oxygen and aluminum, and wherein, in anorthographic projection to the substrate, an end of the opening of thefourth layer is arranged between an end of the opening of the firstlayer and a center of the exposed pad electrode.
 22. The organic deviceaccording to claim 21, wherein a defect density of the fourth layer islower than that of the third layer.
 23. The organic device according toclaim 21, further comprising a second layer arranged between the organicfunction layer and the fourth layer in the pixel region.
 24. The organicdevice according to claim 21, wherein the third layer has a waterpermeability lower than that of the first layer.
 25. The organic deviceaccording to claim 21, further comprising a resin layer disposed on thethird layer.
 26. A display apparatus comprising: the organic deviceaccording to claim 21; and an active element connected to the organicdevice.